A Unified Charge-Based Model for SOI MOSFETs Valid from Intrinsic to Heavily Doped Channel

A unified charge-based model for SOI MOSFETs is presented. The proposed model is valid and accurate from intrinsic to heavily doped channel with various structure parameter variations. The framework starts from onedimension Poisson-Boltzmann’s equation. Based on the full depletion approximation, an accurate inversion charge density equation is obtained. With the inversion charge density solution, the unified drain current expression is derived. And the unified terminal charge and intrinsic capacitance model is also derived under quasi-static case. The validity and accuracy of presented analytic model is proved by extensive verification with numerical simulation.